Effect of GaAlAs 940 Laser on Pain and Wound Healing After Free Gingival Graft

University of Medicine and Pharmacy at Ho Chi Minh City

Status: Completed

Conditions: Low Level Laser Therapy; Healthy; Wound Healing; Postoperative Pain Management

Treatments: Device: palatal stent; Device: 940 nm GaAlAs diode laser

Study type: Interventional

Funder types: Other

Identifiers

NCT07308912

1976/ĐHYD-HĐĐĐ

Details and patient eligibility

About

This randomized controlled clinical trial aims to evaluate the biomodulatory effects of a 940-nm GaAlAs diode laser on postoperative pain control and wound healing at the palatal donor site following free gingival graft harvesting. Adult patients undergoing free gingival graft surgery will be randomly allocated to receive either a single session of adjunctive diode laser irradiation immediately after surgery or conventional postoperative care alone. Postoperative pain will be assessed using a visual analog scale, while clinical parameters related to wound healing, including bleeding tendency, epithelialization, and wound size reduction, will be evaluated at predefined follow-up time points. The findings of this study may contribute to the clinical understanding of photobiomodulation in free gingival graft surgery.

Enrollment: 36 patients

Sex: All

Ages: 18+ years old

Volunteers: Accepts Healthy Volunteers

Inclusion criteria

1. ≥18 years of age;
2. systemically healthy individuals without any conditions that could affect wound healing (e.g., diabetes, immunosuppression, coagulation disorders, Candida infection;
3. full-mouth plaque score (FMPS) and full-mouth bleeding score (FMBS) <15%;
4. no previous history of palatal tissue harvesting;
5. no use of overdentures or partial dentures covering the donor area.

Exclusion criteria

1. pregnant or breastfeeding women;
2. smokers;
3. patients with psychiatric disorders; and
4. patients taking any medications that impair tissue healing and affect pain perception.

Trial design

Primary purpose: Treatment

Allocation: Randomized

Interventional model: Parallel Assignment

Masking: Single Blind

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36 participants in 2 patient groups

Laser group

Experimental group

Description:

After suturing was completed at the recipient site, the donor site in the laser group was irradiated according to the manufacturer's recommended settings. Laser application was performed in the "Pain Therapy" mode using an Epic X diode laser (940 nm wavelength; 0.1 W power; energy density 4 J/cm²; continuous mode; exposure time 40 s; total energy 12 J). The laser beam was held perpendicular to the donor-site wound surface at 0.5 cm, with a spot size of 1 cm². Following irradiation, a palatal stent was placed.

Treatment:

Device: 940 nm GaAlAs diode laser

Control group

Active Comparator group

Description:

After suturing was completed at the recipient site. In the control group, only the palatal stent was applied without laser irradiation.

Treatment:

Device: palatal stent