Effect of Low Level Laser Therapy on Root Resorption During Orthodontic Intrusion of Maxillary Incisors

Al-Azhar University

Status: Invitation-only

Conditions: Root Resorption of Maxillary Incisors

Treatments: Device: gallium aluminum arsenide (Ga-Al-As) semiconductor diode laser (SMARTTM PRO, LASOTRONIX, Poland); Other: group B

Study type: Interventional

Funder types: Other

Identifiers

NCT05707416

796/2193

Details and patient eligibility

About

The present study will be directed to evaluate the effect of low-level laser therapy on root resorption during orthodontic intrusion of upper incisors.

Enrollment: 18 estimated patients

Sex: All

Ages: 12 to 16 years old

Volunteers: Accepts Healthy Volunteers

Inclusion criteria

• Patients with age range between 12-16 years.

  • Overbite > 40% indicated for maxillary intrusion.
  • Mild to moderate crowding of upper incisors.
  • All permanent teeth erupted (excluding 3rd molars).
  • No previous orthodontic treatment.
  • Good oral hygiene with no previous periodontal surgery

Exclusion criteria

• Transverse and/or vertical skeletal dysplasia or craniofacial malformation.

  • Retained primary or missing permanent teeth in the maxillary anterior area, and any kind of tooth/root shape anomaly.
  • Patients with root resorption, impacted canines, or dental anomalies.
  • Poor oral hygiene
  • Present or history of periodontal diseases.
  • Systemic diseases or regular use of medications that could interfere with orthodontic tooth movement.
  • History of trauma affecting the maxillary incisors.
  • Endodontically treated upper anterior teeth.

Trial design

Primary purpose: Treatment

Allocation: Randomized

Interventional model: Parallel Assignment

Masking: None (Open label)

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18 participants in 2 patient groups

Experimental group

Active Comparator group

Description:

Will includes 9 patients who will receive intrusive arche after leveling and alignment assisted with laser with wavelength 635 nm, 6.5J/cm2,The laser will be applied to 4 points of application for each tooth two labial and two palatal started immediately after first intrusive wire then at days 3,7,14 and then every 15 day until achievement of the study objectives

Treatment:

Device: gallium aluminum arsenide (Ga-Al-As) semiconductor diode laser (SMARTTM PRO, LASOTRONIX, Poland)

Control group

Active Comparator group

Description:

Will includes 9 patients who will receive intrusive arches after leveling and alignment without laser application

Treatment:

Other: group B